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- Title
Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures.
- Authors
Lohr, Matthias; Schregle, Ralph; Jetter, Michael; Wächter, Clemens; Müller‐Caspary, Knut; Mehrtens, Thorsten; Rosenauer, Andreas; Pietzonka, Ines; Strassburg, Martin; Zweck, Josef
- Abstract
Piezoelectric and spontaneous polarization play an essential role in GaN-based devices. InGaN quantum wells (QWs) in GaN host material, especially grown along the polar c-direction, exhibit strong internal fields in the QW region due to the indium-induced strain. An exact knowledge of the electric fields is essential, since they are one of the factors limiting the performance of green LDs and LEDs. Differential phase contrast in a scanning transmission electron microscope enables direct, local, and quantitative measurements of these electric fields. For a multi-QW sample, it was possible to determine the piezoelectric field in the range of 43-67 MV m−1 with a resolution of 10 MV m−1 (
- Subjects
ELECTRIC fields; PHASE-contrast microscopy; OPTICAL properties of indium gallium nitride; QUANTUM wells; SCANNING transmission electron microscopy
- Publication
Physica Status Solidi (B), 2016, Vol 253, Issue 1, p140
- ISSN
0370-1972
- Publication type
Article
- DOI
10.1002/pssb.201552288