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- Title
Puntos Cuánticos Autoensamblados de InAs Crecidos Sobre Substratos de GaAs por Epitaxia de Haces Moleculares.
- Authors
Pulzara, A.; Cruz-Hernández, E.; Ramirez, J. Rojas; Bernal, M.; Méndez-García, V. H.; López, M. López
- Abstract
InAs Self-assembled quantum dots (SAQDs) were grown by molecular beam epitaxy (MBE) in a Riber 21 system. The growth of the (SAQDs) was monitored "In situ" by RHEED with the electron beam along of [110] direction. Atomic force microscopy (AFM) images taken on the surface evidence the formation of three-dimensional nanometer structures (~10 nm height) distributed in preferential places on the wetting layer. The quantum dots size and geometry depend on the growth temperature, and of the residual arsenic pressure. Photoluminescence measures carried out at low temperatures show excitonics peaks in 1.3 µm and 1.55 µm wavelength, important for applications in optoelectronics devices. From MFA measurements, we calculated the volume of the SAQDs taking a paraboloide geometry. We observed a strong shift of the excitonic emission energy toward infrared when increasing SAQDs volume, probably due to a decrease in the quantum confinement of the carriers.
- Subjects
INDIUM arsenide; QUANTUM dots; MOLECULAR beam epitaxy; PHOTOLUMINESCENCE; OPTOELECTRONICS
- Publication
Revista Colombiana de Física, 2008, Vol 40, Issue 1, p183
- ISSN
0120-2650
- Publication type
Article