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- Title
Stretched tunnelling body contact structure for suppressing the FBE in a vertical cell DRAM.
- Authors
Cho, Y. S.; Choi, P. H.; Kim, K. H.; Park, J. M.; Hwang, Y. S.; Hong, H. S.; Lee, K. P.; Choi, B. D.
- Abstract
Vertical cell transistor is necessary to drastically reduce the chip size of the dynamic random access memory. This structure has a great advantage in terms of shrinkage, but it also has the disadvantage of increasing the OFF-state current by causing floating body effect (FBE). For the first time, it is demonstrated that a stretched tunnelling diode, which consists of a p+ layer next to the n+ active layer in the buried body, leads to a drastically suppressed FBE. The OFF-state current is sharply reduced by about seven orders compared with a conventional structure. Furthermore, the decrease in the OFF-state current is at minimum when the length of the stretched p + region is approximately half the channel length (Lp/L=1/2).
- Subjects
DYNAMIC random access memory; FLOATING bodies; TUNNEL diodes
- Publication
Electronics Letters (Wiley-Blackwell), 2019, Vol 55, Issue 23, p1252
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2019.2541