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- Title
Ternary static random access memory using quantum dot gate field-effect transistor.
- Authors
Karmakar, Supriya; Jain, Faquir C.
- Abstract
Quantum dot gate field-effect transistor (QDGFET) generates three states in their transfer characteristics. A successful model can explain the generation of third state in the transfer characteristics of the QDGFET. The innovative circuit design using QDGFET can be used to design different ternary logic. This Letter discusses the design of ternary logic static random access memory using QDGFET.
- Subjects
QUANTUM dots; TERNARY system; STATIC random access memory; FIELD-effect transistors; TERNARY logic
- Publication
Micro & Nano Letters (Wiley-Blackwell), 2015, Vol 10, Issue 11, p621
- ISSN
1750-0443
- Publication type
Article
- DOI
10.1049/mnl.2015.0200