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- Title
Effect of Oxidizing Environments on the Diffusion–Segregation Boron Distribution in the Thermal Silicon Dioxide–Silicon System.
- Authors
Aleksandrov, O. V.; Afonin, N. N.
- Abstract
Abstract-The diffusion-segregation boron distribution in the silicon dioxide-silicon system upon oxidation in different environments is studied by secondary-ion mass spectrometry and numerical simulation. The coef- (ficient of boron segregation at the SiO)2(/Si interface and the enhancement of boron diffusion in silicon as func-) tions of the type of oxidizing environment (dry oxygen, wet oxygen, and the presence of hydrochloric acid vapor), the orientation of the silicon surface, and the temperature of oxidizing annealing are obtained. A qualitative model is proposed based on the assumption that the segregation mass transfer of boron through the (SiO)2(/Si interface is associated with the generation of nonequilibrium intrinsic interstitials.
- Subjects
OXIDES &; the environment; MASS spectrometry
- Publication
Technical Physics, 2003, Vol 48, Issue 5, p580
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/1.1576471