Back to matchesWe found a matchYour institution may have access to this item. Find your institution then sign in to continue.TitleGaAsN-on-GaAs MBE Using a DC Plasma Source.AuthorsZhukov, A. E.; Semenova, E. S.; Ustinov, V. M.; Weber, E. R.AbstractA new dc plasma source for MBE growth of GaAsN layers is suggested. The efficiency of nitrogen incorporation, crystal perfection, surface morphology, and luminescent properties of the epilayers vs. operation conditions of the source are studied.SubjectsTHIN films; SEMICONDUCTORSPublicationTechnical Physics, 2001, Vol 46, Issue 10, p1265ISSN1063-7842Publication typeArticleDOI10.1134/1.1412061