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- Title
Rapid photoelectric diagnostics of LEDs based on InGaN/GaN heterostructures.
- Authors
Baranovskiy, M.; Glinskii, G.
- Abstract
A new photoelectric method for rapid diagnostics of light-emitting diodes (LEDs) based on InGaN/GaN multiple quantum well (QW) heterostructures has been developed. An automated setup has been created for determining the arrangement of QWs in heterostructures, quality of interfaces, and degree of charge carrier localization in QWs using the results of room-temperature photoelectric measurements. The diagnostics of one heterostructure takes fractions of a second. The proposed method has advantages over the widely used technique based on the capacitance-voltage profiling of QW structures.
- Subjects
LIGHT emitting diodes; PHOTOELECTRICITY; HETEROSTRUCTURES; GALLIUM nitride; QUANTUM wells; TEMPERATURE effect; ELECTRIC capacity
- Publication
Technical Physics Letters, 2013, Vol 39, Issue 5, p460
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785013050179