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- Title
Revealing the origin of high-energy Raman local mode in nitrogen doped ZnO nanowires.
- Authors
Khachadorian, Sevak; GillEN, Roland; Ton ‐ That, Cuong; Zhu, LiangchEN; Maultzsch, Janina; Phillips, Matthew R.; Hoffmann, Axel
- Abstract
Raman scattering experiments complemented by density functional theory (DFT) calculations of phonon frequencies have been performed to understand the origin of observed high-energy local Raman modes at 2269 cm-1 and 2282 cm-1 on N-plasma treated ZnO nanowires (NWs). We show that these modes increase in intensity with prolonged N-plasma treatment. Our results reveal that the origin of the high-energy Raman local mode is a loosely bound N2 molecule in the vicinity of a zinc vacancy, which according to our latest work acts as a shallow acceptor and leads to the donor-acceptor-pair transition at 3.232 eV [Phys. Rev. B 92, 024103 (2015)]. Moreover the results provide a more thorough description of nitrogen related complexes in ZnO NWs.
- Subjects
DOPED semiconductors; ELECTRIC properties of zinc oxide; ELECTRIC properties of nanowires; RAMAN scattering; DENSITY functional theory; NITROGEN
- Publication
Physica Status Solidi - Rapid Research Letters, 2016, Vol 10, Issue 4, p334
- ISSN
1862-6254
- Publication type
Article
- DOI
10.1002/pssr.201510405