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- Title
Thickness-dependent electroforming behavior of ultra-thin Ta<sub>2</sub>O<sub>5</sub> resistance switching layer.
- Authors
Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong
- Abstract
Electroforming behaviours of Ta2O5 resistance switching memory cell with a diameter of 28 nm and different thickness (0.5-2.0 nm) of Ta2O5 layer have been examined. The devices showed a constant forming electric field of 0.54 V/nm regardless of Ta2O5 thickness. The electroforming with negative bias to top TiN electrode was ascribed to electric field- driven migration of oxygen vacancies, originally residing near the bottom interface, toward the top electrode interface and formation of conducting filaments. The estimated electroforming energy (0.094-0.14 eV) was favourably compared with the hopping energy of electrons from the VO site to a nearby Ta site. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
- Subjects
PHYSICAL metallurgy processes; ELECTROFORMING; ELECTROMETALLURGY; ELECTRIC fields; ELECTROMAGNETIC waves
- Publication
Physica Status Solidi - Rapid Research Letters, 2015, Vol 9, Issue 6, p362
- ISSN
1862-6254
- Publication type
Article
- DOI
10.1002/pssr.201510110