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- Title
The Influence of a Photoinduced Volume Charge on the Weak-Radiation-Induced Interband Photoproduction of Carriers in Semiconductors with Impurity Recombination Centers.
- Authors
Kholodnov, V. A.; Drugova, A. A.
- Abstract
Analytical expressions for the average concentrations of photogenerated electrons and holes are obtained outside the framework of the quasineutrality approximation in the case of a strong surface recombination in the presence of a single-level impurity recombination centers. It is shown that the quasineutrality approximation becomes incorrect with decreasing sample size in the direction of irradiation.
- Subjects
SEMICONDUCTORS; ELECTRONS
- Publication
Technical Physics Letters, 2002, Vol 28, Issue 9, p714
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1511763