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- Title
Crystallization and Silicon Carbide Formation in Two-Layer Amorphous Silicon–Carbon Films during Electron Irradiation.
- Authors
Sidorov, A. I.; Leks, E. Ya.; Podsvirov, O. A.; Vinogradov, A. Yu.
- Abstract
It is shown that the irradiation by focused electron beam with electron energy of 10 keV of two-layer amorphous silicon–carbon films 60 nm thick results in films partial crystallization. Moreover, in the irradiated zone the layer of crystalline silicon carbide with luminescent properties is formed. The observed effects are confirmed by methods of Raman spectroscopy and by luminescence spectra.
- Subjects
SILICON carbide; LUMINESCENCE spectroscopy; CRYSTALLIZATION; RAMAN spectroscopy; ELECTRON beams; SILICON films
- Publication
Technical Physics, 2023, Vol 68, pS115
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/S106378422309013X