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- Title
Quantum Yield of a Silicon Avalanche Photodiode in the Wavelength Range of 120–170 nm.
- Authors
Aruev, P. N.; Belik, V. P.; Zabrodskii, V. V.; Kruglov, E. M.; Nikolaev, A. V.; Sakharov, V. I.; Serenkov, I. T.; Filimonov, V. V.; Sherstnev, E. V.
- Abstract
We have designed a silicon avalanche photodiode for detecting vacuum ultraviolet radiation. The external quantum yield of a silicon avalanche photodiode has been investigated in the wavelength range of 120–170 nm. It is shown that the avalanche photodiode has an external quantum yield of 24–150 electrons/photons at a reverse bias voltage of 230–345 V. Testing of this avalanche photodiode with pulsed illumination at wavelengths of 280 and 340 nm has shown performance corresponding to a transmission band no narrower than 25 MHz.
- Subjects
AVALANCHES; WAVELENGTHS; SILICON; FAR ultraviolet radiation
- Publication
Technical Physics, 2020, Vol 65, Issue 8, p1333
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/S1063784220080022