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High-Power Single-Mode 1.3-μm Lasers Based on InAs/AlGaAs/GaAs Quantum Dot Heterostructures.
Published in:
Technical Physics Letters, 2004, v. 30, n. 1, p. 9, doi. 10.1134/1.1646701
By:
- Livshits, D.A.;
- Kovsh, A.R.;
- Zhukov, A.E.;
- Maleev, N.A.;
- Mikhrin, S.S.;
- Vasil'ev, A.P.;
- Nikitina, E.V.;
- Ustinov, V.M.;
- Ledentsov, N.N.;
- Lin, G.;
- Chi, J.
Publication type:
Article
Process of Fabricating Semiconductor Microcavities and Photon Crystals.
Published in:
Technical Physics, 2005, v. 50, n. 2, p. 217, doi. 10.1134/1.1866438
By:
- Arakcheeva, E.M.;
- Nashchekin, A.V.;
- Solov'ev, V.A.;
- Tanklevskaya, E.M.;
- Maksimov, M.V.;
- Konnikov, S.G.;
- Gurevich, S.A.;
- Ledentsov, N.N.
Publication type:
Article
Optical studies of a two-dimensional photonic crystal with the InAs/InGaAs quantum-dot structure as an active region.
Published in:
Semiconductors, 2006, v. 40, n. 7, p. 812, doi. 10.1134/S1063782606070141
By:
- Blokhin, S.A.;
- Usov, O.A.;
- Nashchekin, A.V.;
- Arakcheeva, E.M.;
- Tanklevskaya, E.M.;
- Konnikov, S.G.;
- Zhukov, A.E.;
- Maksimov, M.V.;
- Ledentsov, N.N.;
- Ustinov, V.M.
Publication type:
Article
Optical and Structural Properties of InAs Quantum Dot Arrays Grown in an InxGa1 – xAs Matrix on a GaAs Substrate.
Published in:
Semiconductors, 2004, v. 38, n. 7, p. 833, doi. 10.1134/1.1777610
By:
- Kryzhanovskaya, N.V.;
- Gladyschev, A.G.;
- Blokhin, S.A.;
- Musikhin, Yu G.;
- Zhukov, A.E.;
- Maksimov, M.V.;
- Zakharov, N.D.;
- Tatsul'nikov, A.F.;
- Ledentsov, N.N.;
- Werner, P.;
- Guffart, F.;
- Bimberg, D.
Publication type:
Article
Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 727, doi. 10.1134/1.1766380
By:
- Karachinsky, L.Ya.;
- Gordeev, N.Yu.;
- Novikov, I.I.;
- Maximov, M.V.;
- Kovsh, A.R.;
- Wang, J.S.;
- Hsiao, R.S.;
- Chi, J.Y.;
- Ustinov, V.M.;
- Ledentsov, N.N.
Publication type:
Article
High-Power 1.5 μm InAs–InGaAs Quantum Dot Lasers on GaAs Substrates.
Published in:
Semiconductors, 2004, v. 38, n. 6, p. 732, doi. 10.1134/1.1766381
By:
- Maksimov, M.V.;
- Shernyakov, Yu.M.;
- Kryzhanovskaya, N.V.;
- Gladyshev, A.G.;
- Musikhin, Yu.G.;
- Ledentsov, N.N.;
- Zhukov, A.E.;
- Vasil'ev, A.P.;
- Kovsh, A.R.;
- Mikhrin, S.S.;
- Semenova, E.S.;
- Maleev, N.A.;
- Nikitina, E.V.;
- Ustinov, V.M.;
- Alferov, Zh.I.
Publication type:
Article
Design and Technology of Vertical-Cavity Surface-Emitting Lasers with Nonconducting Epitaxial Mirrors.
Published in:
Semiconductors, 2003, v. 37, n. 10, p. 1234, doi. 10.1134/1.1619524
By:
- Maleev, N.A.;
- Kovsh, A.P.;
- Zhukov, A.E.;
- Vasil'ev, A.P.;
- Mikhrin, S.S.;
- Kuz'menkov, A.G.;
- Bedarev, D.A.;
- Zadiranov, Yu. M.;
- Kulagina, M.M.;
- Shernyakov, Yu. M.;
- Shulenkov, A.S.;
- Bykovskii, V.A.;
- Solov'ev, Yu. M.;
- Moller, C.;
- Ledentsov, N.N.;
- Ustinov, V.M.
Publication type:
Article
Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29μm.
Published in:
Semiconductors, 2003, v. 37, n. 10, p. 1239, doi. 10.1134/1.1619525
By:
- Novikov, I.I.;
- Maksimov, M.V.;
- Shernyakov, Yu. M.;
- Gordeev, N. Yu.;
- Kovsh, A.R.;
- Zhukov, A.E.;
- Mikhrin, S.S.;
- Maleev, N.A.;
- Vasil'ev, A.P.;
- Ustinov, V.M.;
- Alferov, Zh. I.;
- Ledentsov, N.N.;
- Bimberg, D.
Publication type:
Article
Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates.
Published in:
Semiconductors, 2003, v. 37, n. 9, p. 1104, doi. 10.1134/1.1610128
By:
- Semenova, E.S.;
- Zhukov, A.E.;
- Vasil'ev, A.P.;
- Mikhrin, S.S.;
- Kovsh, A.R.;
- Ustinov, V.M.;
- Musikhin, Yu.G.;
- Blokhin, S.A.;
- Gladyshev, A.G.;
- Ledentsov, N.N.
Publication type:
Article
Metamorphic Lasers for 1.3-μm Spectral Range Grown on GaAs Substrates by MBE.
Published in:
Semiconductors, 2003, v. 37, n. 9, p. 1119, doi. 10.1134/1.1610131
By:
- Zhukov, A.E.;
- Kovsh, A.R.;
- Mikhrin, S.S.;
- Semenova, E.S.;
- Maleev, N.A.;
- Vasil'ev, A.P.;
- Nikitina, E.V.;
- Kryzhanovskaya, N.V.;
- Gladyshev, A.G.;
- Shernyakov, Yu.M.;
- Musikhin, Yu.G.;
- Maksimov, M.V.;
- Ledentsov, N.N.;
- Ustinov, V.M.;
- Alferov, Zh.I.
Publication type:
Article
Structure of Heterointerfaces and Photoluminescence Properties of GaAs/AlAs Superlattices Grown on (311)A and (311)B Surfaces: Comparative Analysis.
Published in:
Semiconductors, 2002, v. 36, n. 8, p. 895, doi. 10.1134/1.1500467
By:
- Lyubas, G.A.;
- Ledentsov, N.N.;
- Litvinov, D.;
- Semyagin, B.R.;
- Soshnikov, I.P.;
- Ustinov, V.M.;
- Bolotov, V.V.;
- Gerthsen, D.
Publication type:
Article
Large Spectral Splitting of TE and TM Components of QDs in a Microcavity.
Published in:
Physica Status Solidi (B), 2001, v. 224, n. 3, p. 811, doi. 10.1002/(SICI)1521-3951(200104)224:3<811::AID-PSSB811>3.0.CO;2-X
By:
- Maximov, M.V.;
- Krestnikov, I.L.;
- Makarov, A.G.;
- Zhukov, A.E.;
- Maleev, N.A.;
- Ustinov, V.M.;
- Tsatsulnikov, A.F.;
- Alferov, Zh.I.;
- Chernyshov, A.Yu.;
- Ledentsov, N.N.;
- Bimberg, D.;
- Sotomayor Torres, C.M.
Publication type:
Article
Radiative Inter-Sublevel Transitions in InGaAs/AlGaAs Quantum Dots.
Published in:
Physica Status Solidi (B), 2001, v. 224, n. 3, p. 833, doi. 10.1002/(SICI)1521-3951(200104)224:3<833::AID-PSSB833>3.0.CO;2-H
By:
- Weber, A.;
- Goede, K.;
- Grundmann, M.;
- Heinrichsdorff, F.;
- Bimberg, D.;
- Ustinov, V.M.;
- Zhukov, A.E.;
- Ledentsov, N.N.;
- Kopev, P.S.;
- Alferov, Zh.I.
Publication type:
Article
InAs/InGaAs Quantum Dot Microcavity Diode Structures on GaAs Substrates Emitting in the 1.25-1.33 μm Wavelength Range.
Published in:
Physica Status Solidi (B), 2001, v. 224, n. 3, p. 803, doi. 10.1002/(SICI)1521-3951(200104)224:3<803::AID-PSSB803>3.0.CO;2-T
By:
- Maleev, N.A.;
- Krestnikov, I.L.;
- Kovsh, A.R.;
- Sakharov, A.V.;
- Ustinov, V.M.;
- Mikhrin, S.S.;
- Passenberg, W.;
- Pawlowski, E.;
- Möller, C.;
- Tsatsulnikov, A.F.;
- Künzel, H.;
- Ledentsov, N.N.;
- Alferov, Zh.I.;
- Bimberg, D.
Publication type:
Article
Novel Infrared Quantum Dot Lasers: Theory and Reality.
Published in:
Physica Status Solidi (B), 2001, v. 224, n. 3, p. 787, doi. 10.1002/(SICI)1521-3951(200104)224:3<787::AID-PSSB787>3.0.CO;2-M
By:
- Bimberg, D.;
- Grundmann, M.;
- Ledentsov, N.N.;
- Mao, M.H.;
- Ribbat, Ch.;
- Sellin, R.;
- Ustinov, V.M.;
- Zhukov, A.E.;
- Alferov, Zh.I.;
- Lott, J.A.
Publication type:
Article
Entropy-Driven Effects in Self-Organized Formation of Quantum Dots.
Published in:
Physica Status Solidi (B), 2001, v. 224, n. 2, p. 503, doi. 10.1002/1521-3951(200103)224:2<503::AID-PSSB503>3.0.CO;2-6
By:
- Shchukin, V.A.;
- Ledentsov, N.N.;
- Hoffmann, A.;
- Bimberg, D.;
- Soshnikov, I.P.;
- Volovik, B.V.;
- Ustinov, V.M.;
- Litvinov, D.;
- Gerthsen, D.
Publication type:
Article
Electronic Properties of InAs/GaAs Quantum Dots Covered by an InxGa1-xAs Quantum Well.
Published in:
Physica Status Solidi (B), 2001, v. 224, n. 1, p. 61, doi. 10.1002/1521-3951(200103)224:1<61::AID-PSSB61>3.0.CO;2-O
By:
- Guffarth, F.;
- Heitz, R.;
- Schliwa, A.;
- Stier, O.;
- Kovsh, A.R.;
- Ustinov, V.;
- Ledentsov, N.N.;
- Bimberg, D.
Publication type:
Article
Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting Laser Operating at Room Temperature.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 511, doi. 10.1002/(SICI)1521-3951(199911)216:1<511::AID-PSSB511>3.0.CO;2-7
By:
- Krestnikov, I.L.;
- Lundin, W.V.;
- Sakharov, A.V.;
- Semenov, V.A.;
- Usikov, A.S.;
- Tsatsulnikov, A.F.;
- Alferov, Zh.I.;
- Ledentsov, N.N.;
- Hoffmann, A.;
- Bimberg, D.
Publication type:
Article
Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 435, doi. 10.1002/(SICI)1521-3951(199911)216:1<435::AID-PSSB435>3.0.CO;2-O
By:
- Sakharov, A.V.;
- Lundin, W.V.;
- Krestnikov, I.L.;
- Semenov, V.A.;
- Usikov, A.S.;
- Tsatsulnikov, A.F.;
- Musikhin, Yu.G.;
- Baidakova, M.V.;
- Alferov, Zh.I.;
- Ledentsov, N.N.;
- Holst, J.;
- Hoffmann, A.;
- Bimberg, D.;
- Soshnikov, I.P.;
- Gerthsen, D.
Publication type:
Article
54 Gbit/s OOK transmission using single‐mode VCSEL up to 2.2 km MMF.
Published in:
Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 7, p. 633, doi. 10.1049/el.2015.4264
By:
- Stepniak, G.;
- Lewandowski, A.;
- Kropp, J.R.;
- Ledentsov, N.N.;
- Shchukin, V.A.;
- Ledentsov, N.;
- Schaefer, G.;
- Agustin, M.;
- Turkiewicz, J.P.
Publication type:
Article

Found: 20

High-Power Single-Mode 1.3-μm Lasers Based on InAs/AlGaAs/GaAs Quantum Dot Heterostructures.

Process of Fabricating Semiconductor Microcavities and Photon Crystals.

Optical studies of a two-dimensional photonic crystal with the InAs/InGaAs quantum-dot structure as an active region.

Optical and Structural Properties of InAs Quantum Dot Arrays Grown in an In<sub>x</sub>Ga<sub>1 – x</sub>As Matrix on a GaAs Substrate.

Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range.

High-Power 1.5 μm InAs–InGaAs Quantum Dot Lasers on GaAs Substrates.

Design and Technology of Vertical-Cavity Surface-Emitting Lasers with Nonconducting Epitaxial Mirrors.

Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29μm.

Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates.

Metamorphic Lasers for 1.3-μm Spectral Range Grown on GaAs Substrates by MBE.

Structure of Heterointerfaces and Photoluminescence Properties of GaAs/AlAs Superlattices Grown on (311)A and (311)B Surfaces: Comparative Analysis.

Large Spectral Splitting of TE and TM Components of QDs in a Microcavity.

Radiative Inter-Sublevel Transitions in InGaAs/AlGaAs Quantum Dots.

InAs/InGaAs Quantum Dot Microcavity Diode Structures on GaAs Substrates Emitting in the 1.25-1.33 μm Wavelength Range.

Novel Infrared Quantum Dot Lasers: Theory and Reality.

Entropy-Driven Effects in Self-Organized Formation of Quantum Dots.

Electronic Properties of InAs/GaAs Quantum Dots Covered by an In<sub>x</sub>Ga<sub>1-x</sub>As Quantum Well.

Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting Laser Operating at Room Temperature.

Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix.

54 Gbit/s OOK transmission using single‐mode VCSEL up to 2.2 km MMF.