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- Title
Transition Processes Occurring under Continuous and Stepwise Heating of GaAs Surface-Barrier Structures.
- Authors
Gol’dberg, Yu. A.; Posse, E. A.
- Abstract
Evolution of the capacitance-voltage (C-U) and current-voltage (I[sub f]-U and I[sub r]-U) characteristics of solid metal-semiconductor structures (Ni/GaAs) in the process of their continuous and stepwise heating are studied. Properties of the initial structures obey the theory of thermionic emission. It has been shown that as a result of continuous heating, the rectifying structures become ohmic at a temperature of T[sub Ohm] = 720 K, which is substantially lower than the melting points of the metal or the metal-semiconductor eutectic. For comparison, properties of the structures annealed at different temperatures T[sub ann] are measured after cooling to room temperature (stepwise heating). In this case, I-U characteristics are closer to the initial ones for annealing temperatures T[sub ann] < T[sub 0] = 553 K; for T[sub ann] > T[sub 0], the characteristics display excess currents; and, finally, for T[sub ann] exceeding TO by 200-300 K, the characteristics become purely ohmic. It is suggested that these effects are due to a chemical interaction between Ni and GaAs, which changes the properties of the semiconductor surface.
- Subjects
GALLIUM arsenide semiconductors; SEMICONDUCTOR-metal boundaries; NICKEL; EUTECTICS
- Publication
Technical Physics, 2001, Vol 46, Issue 9, p1128
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/1.1404165