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- Title
Group‐IV Semiconductor Materials for Nanoelectronics and Cryogenic Electronics.
- Authors
Hiller, Daniel; Duffy, Ray; Georgiev, Vihar; Weber, Walter
- Abstract
Ratschinski et al. report about another alternative silicon doping method, similar to modulation doping of III-V semiconductors, that is based on Al-doped SiO SB 2 sb shells around Si nanowires (article number 2300068). Group-IV semiconductors, namely Si, Ge, Sn and their compounds, are the most important materials in micro- and nanoelectronics but they will also play a key role in future quantum devices. Finally, simulations and modelling are crucial for nanoelectronics, starting from ab-initio methods to model physical/quantum-chemical properties of group-IV nanostructures to device simulations modelling transport and performance.
- Subjects
CRYOELECTRONICS; SEMICONDUCTOR materials; NANOELECTRONICS; SILICON nanowires; SEMICONDUCTOR doping; HOLE mobility
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2023, Vol 220, Issue 13, p1
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.202300429