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- Title
Structure and dielectric properties of ultra-thin ZrO[sub 2] films for high-k gate dielectric application prepared by pulsed laser deposition.
- Authors
Zhu, J.; Liu, Z.G.
- Abstract
ZrO[sub 2] thin films have been prepared on Pt-coated silicon substrates and directly on n-Si(100) substrates by the pulsed laser deposition (PLD) technique using a ZrO[sub 2] ceramic target under different deposition conditions. X-ray diffraction showed that the films prepared at 400 °C in 20 Pa oxygen ambient remained amorphous. Differential thermal analysis was carried out to study the crystallization behavior of ZrO[sub 2]. The dielectric constant of ZrO[sub 2] was determined to be around 24 by measuring a Pt/ZrO[sub 2]/Pt capacitor structure. Sputtering depth profile X-ray photoelectron spectroscopy was used to investigate the interfacial characteristics of ZrO[sub 2]/n-Si stacks. A Zr silicate interfacial layer was formed between the ZrO[sub 2] layer and the silicon substrate. The equivalent oxide thickness (EOT) and leakage current densities of the films with 6.6 nm physical thickness post-annealed in O[sub 2] and N[sub 2] ambient were investigated. An EOT of 1.65 nm with a leakage current of 36.2 mA/cm[sup 2] at 1 V gate voltage for the film post-annealed in N[sub 2] has been obtained. ZrO[sub 2] thin films prepared by PLD have acceptable structure and dielectric properties required by a candidate material of high-k gate dielectrics.
- Subjects
THIN films; ZIRCONIUM oxide; DIELECTRICS; PULSED laser deposition; X-ray diffraction; PHYSICS
- Publication
Applied Physics A: Materials Science & Processing, 2004, Vol 78, Issue 5, p741
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-002-2025-0