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- Title
Preparation and characterization of ferroelectric SrBi[sub 2] Ta[sub 2] O[sub 9] thin films on Si using Al[sub 2] O[sub 3] buffer layers.
- Authors
Liu, X.H.; Liu, Z.G.; Liu, J.M.
- Abstract
SrBi[sub 2] Ta[sub 2] O[sub 9] (SBT) thin films were prepared on p-type Si(100) substrates with Al[sub 2] O[sub 3] buffer layers. Both the SBT films and the Al[sub 2] O[sub 3] buffer layers were deposited by a pulsed laser deposition technique using a KrF excimer laser. An Al prelayer was used to prevent Si surface oxidization in the initial growth stage. It is shown that Al[sub 2] O[sub 3] buffer layers effectively prevented interdiffusion between SBT and Si substrates. Furthermore, the capacitance–voltage (C-V) characteristics of the SBT/Al[sub 2] O[sub 3] /Si heterostructures show a hysteresis loop with a clockwise trace, demonstrating the ferroelectric switching properties of SBT films and showing a memory window of 1.6 V at 1 MHz.
- Subjects
THIN films; PULSED laser deposition; EXCIMER lasers
- Publication
Applied Physics A: Materials Science & Processing, 2001, Vol 73, Issue 3, p331
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s003390000698