We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Optical detection of ballistically injected electrons in III/V heterostructures.
- Authors
Kemerink, M.; Sauthoff, K.; Koenraad, P.M.; Gerritsen, J.W.; van Kempen, H.; Wolter, J.H.
- Abstract
Abstract. We present a novel spectroscopic technique that is based on the ballistic injection of minority carriers from the tip of a scanning-tunneling microscope into a semiconductor heterostructure. By analyzing the resulting electroluminescence spectrum as a function of tip-sample bias, both the injection barrier height and the carrier relaxation rate GAMMA[sub s] alter injection can be determined. At 4.2 K we found GAMMA[sub s] =5 x 10[sup 13] s[sup -1] and at 77 K we found GAMMA[sub s] = 8 x 10[sup 13] s[sup -1]. From current-dependent measurements we find that, at room temperature, a large fraction of the carriers is trapped prior to radiative recombination. At high currents or low temperatures the traps become saturated. We tentatively identify the Be acceptors in the structure as trapping centers.
- Subjects
SEMICONDUCTORS; SCANNING tunneling microscopy; ELECTROLUMINESCENCE
- Publication
Applied Physics A: Materials Science & Processing, 2001, Vol 72, Issue 8, pS201
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s003390100669