Found: 6
Select item for more details and to access through your institution.
Rivalry under Pressure: The Coexistence of Ambient‐Pressure Motifs and Close‐Packing in Silicon Phosphorus Nitride Imide SiP<sub>2</sub>N<sub>4</sub>NH.
- Published in:
- Angewandte Chemie, 2019, v. 131, n. 11, p. 3436, doi. 10.1002/ange.201813789
- By:
- Publication type:
- Article
United in Nitride: The Highly Condensed Boron Phosphorus Nitride BP<sub>3</sub>N<sub>6</sub>.
- Published in:
- Angewandte Chemie, 2018, v. 130, n. 40, p. 13386, doi. 10.1002/ange.201808111
- By:
- Publication type:
- Article
United in Nitride: The Highly Condensed Boron Phosphorus Nitride BP<sub>3</sub>N<sub>6</sub>.
- Published in:
- Angewandte Chemie International Edition, 2018, v. 57, n. 40, p. 13202, doi. 10.1002/anie.201808111
- By:
- Publication type:
- Article
Trigonal Planar [PN<sub>3</sub>]<sup>4−</sup> Anion in the Nitridophosphate Oxide Ba<sub>3</sub>[PN<sub>3</sub>]O.
- Published in:
- Angewandte Chemie, 2024, v. 136, n. 32, p. 1, doi. 10.1002/ange.202405849
- By:
- Publication type:
- Article
Trigonal Planar [PN<sub>3</sub>]<sup>4−</sup> Anion in the Nitridophosphate Oxide Ba<sub>3</sub>[PN<sub>3</sub>]O.
- Published in:
- Angewandte Chemie International Edition, 2024, v. 63, n. 32, p. 1, doi. 10.1002/anie.202405849
- By:
- Publication type:
- Article
Rivalry under Pressure: The Coexistence of Ambient‐Pressure Motifs and Close‐Packing in Silicon Phosphorus Nitride Imide SiP<sub>2</sub>N<sub>4</sub>NH.
- Published in:
- Angewandte Chemie International Edition, 2019, v. 58, n. 11, p. 3398, doi. 10.1002/anie.201813789
- By:
- Publication type:
- Article