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- Title
Optical Study of InP Quantum Dots.
- Authors
Vinokurov, D. A.; Kapitonov, V. A.; Nikolaev, D. N.; Sokolova, Z. N.; Tarasov, I. S.
- Abstract
Results of photoluminescence (PL) studies of self-organized nanoscale InP islands (quantum dots, QDs) in the In[sub 0.49]Ga[sub 0.51]P matrix, grown on a GaAs substrate by metalorganic vapor phase epitaxy (MOVPE), are presented. Dependences of the PL efficiency on temperature in the range 77-300 K and on excitation level at pumping power densities of 0.01-5 kW/cm² have been obtained. The PL spectra are a superposition of emission peaks from QDs and the wetting layer. Their intensity ratio depends on the pumping power and temperature, and the emission wavelength varies in the range 0.65-0.73 µm. At 77 K and low excitation level, InP QDs exhibit high temperature stability of the emission wavelength and high quantum efficiency.
- Subjects
QUANTUM dots; GALLIUM arsenide semiconductors; PHOTOLUMINESCENCE
- Publication
Semiconductors, 2001, Vol 35, Issue 2, p235
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1349939