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Title
Filling the green gap.
Abstract
The author relates to the fabrication of an InGaN semiconductor laser diode that functions at a wavelength of 515 nanometers and gives off milliwatt-level powers in continuous-wave mode at room temperature by researchers of Nichia Corp. in Japan. He comments on the functionality of the indirect approach of using compact frequency-doubled green lasers through the use of a nonlinear crystal. He notes the impact of Nichia's demonstration to practical green laser diode.