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- Title
PN-junction diode behavior based on polyaniline nanotubes field effect transistor.
- Authors
Aw, K. C.; Tjitra Salim, N.; Peng, Hui; Zhang, Lijuan; Travas-Sejdic, J.; Gao, W.
- Abstract
Polyaniline (PANI) nanotubes configured as a field effect transistor (FET) exhibits a p–n junction diode behavior. The forward-bias current can be modulated by a gate voltage; turning on at negative gate voltage and turning off at positive gate voltage. An energy band diagram model has been proposed to explain the rectifying effect of the PANI nanotubes FET (PNT-FET). All the four different forward bias conduction mechanisms of a typical p–n junction diode can be identified for this PNT-FET using a semi-log graph to confirm this resemblance.
- Subjects
POLYMERS; NANOTUBES; FIELD-effect transistors; ELECTRIC potential; DIODES; ENERGY bands; NANOSTRUCTURED materials; FULLERENES; FIELD emission; EQUIPMENT &; supplies
- Publication
Journal of Materials Science: Materials in Electronics, 2008, Vol 19, Issue 10, p996
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-007-9438-7