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- Title
Wide-band hybrid power amplifier design using GaN FETs.
- Authors
Xiao, D.; Schreurs, D.; Van Niekerk, C.; De Raedt, W.; Derluyn, J.; Germain, M.; Nauwelaers, B.; Borghs, G.
- Abstract
In this article, the design, fabrication, and testing of a wide band single-ended power amplifier (PA) using GaN field effect transistors (FETs) are reported. The single-ended amplifier demonstrates a bandwidth larger than 30% around 2 GHz, with a high gain, PAE, and output power combination. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2008.
- Subjects
POWER amplifiers; ELECTRONIC amplifiers; TRANSISTORS; BANDWIDTHS; MICROWAVE devices
- Publication
International Journal of RF & Microwave Computer-Aided Engineering, 2008, Vol 18, Issue 6, p536
- ISSN
1096-4290
- Publication type
Article
- DOI
10.1002/mmce.20329