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- Title
Boron Implanted in Silicon: Segregation at Angular Configurations of the Silicon/Silicon Dioxide Oxidation Boundary.
- Authors
Tarnavsky, G. A.; Shpak, S. I.; Obrecht, M. S.
- Abstract
Based on computer simulation of the physicochemical segregation processes involving dopants implanted into a host material (silicon), the details of boron injection were investigated for four types of angular configurations (direct and inverse kinks and cavities of the “trench” and “square” types) of the “silicon/silicon dioxide” oxidation boundary. A complicated picture of the B distribution inside the Si and SiO[sub 2] regions and at the SiO[sub 2]/Si front was obtained and analyzed in general terms. © 2001 MAIK “Nauka / Interperiodica”.
- Subjects
BORON; SILICON; OXIDATION
- Publication
JETP Letters, 2001, Vol 73, Issue 9, p474
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/1.1385661