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- Title
High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen.
- Authors
Pallecchi, E.; Lafont, F.; Cavaliere, V.; Schopfer, F.; Mailly, D.; Poirier, W.; Ouerghi, A.
- Abstract
We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the Si dangling bonds at the graphene/SiC(0001) interface to achieve high carrier mobility. Upon successful Si dangling bonds elimination, carrier mobility increases from 3 000 cm2V-1s-1 to>11 000 cm2V-1s-1 at 0.3 K. Additionally, graphene electron concentration tends to decrease from a few 1012cm-2 to less than 1012 cm2. For a typical large (30×280 μm2) Hall bar, we report the observation of the integer quantum Hall states at 0.3 K with well developed transversal resistance plateaus at Landau level filling factors of n = 2, 6, 10, 14... 42 and Shubnikov de Haas oscillation of the longitudinal resistivity observed from about 1 T. In such a device, the Hall state quantization at n = 2, at 19 T and 0.3 K, can be very robust: the dissipation in electronic transport can stay very low, with the longitudinal resistivity lower than 5 mΩ, for measurement currents as high as 250 μA. This is very promising in the view of an application in metrology.
- Subjects
ELECTRON mobility measurement; ELECTRIC properties of graphene; GRAPHITIZATION; QUANTUM Hall effect; LANDAU levels
- Publication
Scientific Reports, 2014, p1
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep04558