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- Title
Synthesis of vertically oriented GaN nanowires on a LiAlO<sub>2</sub> substrate via chemical vapor deposition.
- Authors
He, Xiaoli; Meng, Guowen; Zhu, Xiaoguang; Kong, Mingguang
- Abstract
Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on γ-LiAlO2 (100) substrate coated with a Au layer, via a chemical vapor deposition process at 1000 °C using gallium and ammonia as source materials. The GaN NWs grow along the nonpolar [10 $$ \bar 1 $$0] direction with steeply tapering tips, and have triangular cross-sections with widths of 50–100 nm and lengths of up to several microns. The GaN NWs are formed by a vapor-liquid-solid growth mechanism and the tapering tips are attributed to the temperature decrease in the final stage of the synthesis process. The aligned GaN NWs show blue-yellow emission originating from defect levels, residual impurities or surface states of the GaN NWs, and have potential applications in nanotechnology.
- Publication
Nano Research, 2009, Vol 2, Issue 4, p321
- ISSN
1998-0124
- Publication type
Article
- DOI
10.1007/s12274-009-9029-4