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- Title
Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching Based Memristors.
- Authors
PICOS, Rodrigo; ROLDAN, Juan Bautista; AL CHAWA, Mohamed Moner; GARCIA-FERNANDEZ, Pedro; JIMENEZ-MOLINOS, Francisco; GARCIA-MORENO, Eugeni
- Abstract
We have measured the transition process from the high to low resistivity states, i.e., the reset process of resistive switching based memristors based on Ni/HfO2Si-n+ structures, and have also developed an analytical model for their electrical characteristics. When the characteristic curves are plotted in the current-voltage (I-V) domain a high variability is observed. In spite o f that, when the same curves are plotted in the charge-flux domain (Q -ø), they can be described by a simple model containing only three parameters: the charge (Qrst and the flux ( ørst at the reset point, and an exponent, n, relating the charge and the flux before the reset transition. The three parameters can be easily extracted from the Q - ø plots. There is a strong correlation between these three parameters, the origin o f which is still under study.
- Subjects
ELECTRIC switchgear; MEMRISTORS; EMPIRICAL research; ELECTRIC potential; ELECTRIC flux; PARAMETER estimation
- Publication
Radioengineering, 2015, Vol 24, Issue 2, p420
- ISSN
1210-2512
- Publication type
Article
- DOI
10.13164/re.2015.0420