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- Title
Residual stress regulation for CZTSSe thin film on flexible titanium substrate by introducing a Ge transition layer.
- Authors
Sun, Luanhong; Shen, Honglie; Huang, Hulin; Yang, Jiale; Li, Yanqi
- Abstract
In this paper, a sputtered Ge transition layer between Mo and flexible titanium substrate was used to regulate the residual stress of Cu2ZnSn(S,Se)4 (CZTSSe) thin film. 15 nm thick Ge transition layer was proved to be the optimum thickness. A clear residual stress reduction from 3.26 to 0.57 GPa occurred after adding the optimized transition layer, which could be largely attributed to the relieved mismatch of Mo and titanium substrate. It was also found that the transition Ge layer about 15 nm could effectively enhance the crystal quality, grain size and compactness of CZTSSe thin film. However, further increased thickness beyond 15 nm was detrimental for solar cell application due to the increased residual stress. X-ray photoelectron spectroscopy revealed the transition layer did not diffuse into CZTSSe absorber during selenization process. The tape test revealed that 96.7% area of the film were still remained for the optimized CZTSSe thin film. After 100 bending tests, the cell attenuation with 15 nm Ge transition layer was 51% less than that without Ge transition layer.
- Subjects
RESIDUAL stresses; TITANIUM; THIN films; SOLAR cells; TRANSITION metal compounds
- Publication
Journal of Materials Science: Materials in Electronics, 2019, Vol 30, Issue 8, p7337
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-019-01046-0