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- Title
Study on different isolation technology on the performance of blue micro-LEDs array applications.
- Authors
Lin, Shao-Hua; Lo, Yu-Yun; Hsu, Yu-Hsuan; Lin, Chien-Chung; Zan, Hsiao-Wen; Lin, Yi-Hsin; Wuu, Dong-Sing; Hsiao, Ching-Lien; Horng, Ray-Hua
- Abstract
In this study, a 3 × 3 blue micro-LED array with a pixel size of 10 × 10 μm2 and a pitch of 15 μm was fabricated on an epilayer grown on a sapphire substrate using metalorganic chemical vapor deposition technology. The fabrication process involved photolithography, wet and dry etching, E-beam evaporation, and ion implantation technology. Arsenic multi-energy implantation was utilized to replace the mesa etching for electrical isolation, where the implantation depth increased with the average energy. Different ion depth profiles had varying effects on electrical properties, such as forward current and leakage currents, potentially causing damage to the n-GaN layer and increasing the series resistance of the LEDs. As the implantation depth increased, the light output power and peak external quantum efficiency of the LEDs also increased, improving from 5.33 to 9.82%. However, the efficiency droop also increased from 46.3 to 48.6%.
- Subjects
LED displays; PERFORMANCE technology; GALVANIC isolation; ION implantation; CHEMICAL vapor deposition; STRAY currents
- Publication
Discover Nano, 2024, Vol 19, Issue 1, p1
- ISSN
2731-9229
- Publication type
Article
- DOI
10.1186/s11671-024-04047-z