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- Title
Positron Structural Analysis of ScN Films Deposited on MgO Substrate.
- Authors
MORE-CHEVALIER, J.; HORÁK, L.; CICHOŇ, S.; HRUŠKA, P.; ČÍŽEK, J.; LIEDKE, M. O.; BUTTERLING, M.; WAGNER, A.; BULÍŘ, J.; HUBÍK, P.; GEDEONOVÁ, Z.; LANČOK, J.
- Abstract
Scandium nitride (ScN) is a semiconductor with a rocksalt-structure that has attracted attention for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices. Two ScN films of 118 nm and 950 nm thicknesses were deposited at the same conditions on MgO (001) substrate by reactive magnetron sputtering. Poly-orientation of films was observed with first an epitaxial growth on MgO and then a change in the orientation growth due to the decrease of the adatom mobility during the film growth. Positron lifetime measurements showed a high concentration of nitrogen vacancies in both films with a slightly higher concentration for the thicker ScN film. Presence of nitrogen vacancies explains the values of direct band gaps of 2:53±0:01 eV, and 2:56±0:01 eV which has been measured on ScN films of 118 nm and 950 nm thicknesses, respectively.
- Subjects
MAGNETRON sputtering; THERMOELECTRIC materials; SUPERLATTICES; POLYMER films; THERMOELECTRIC conversion; POSITRONS; REACTIVE sputtering
- Publication
Acta Physica Polonica: A, 2020, Vol 137, Issue 2, p209
- ISSN
0587-4246
- Publication type
Article
- DOI
10.12693/APhysPolA.137.209