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- Title
Operation of a Latching, Low-Loss, Wideband Microwave Phase-Change Switch Below 1 K.
- Authors
Borodulin, P.; El-Hinnawy, N.; Graninger, A. L.; King, M. R.; Padilla, C. R.; Upton, L. N.; Hinkey, R. T.; Schlesinger, T. E.; Pesetski, A. A.; Sherwin, M. E.; Young, R. M.
- Abstract
We report on the design, fabrication, and demonstration of the operation of a latching (nonvolatile) low-loss microwave switch at 4.2 K and 40 mK using the phase-change material germanium telluride (GeTe) as the switching element. The single-pole double-throw (SPDT) series-shunt switch has a single RF input and two selectable RF outputs. An insertion loss of less than 1 dB from DC to 10 GHz was demonstrated, with virtually identical performance across 5000 switching cycles at 40 mK. We have also characterized the resistance of the GeTe thin-film material used in the fabrication of the SPDT switch from room temperature down to 11 mK. While bulk GeTe is known to become superconducting below 1 K, these GeTe films showed no detectable superconducting transition, resulting in a switch with finite on-state DC resistance. Given the wide range of phase-change material candidates reported in the literature and prior evidence of superconductivity, this demonstration paves the way for future development of a near-ideal switch which could have zero on-state DC resistance at cryogenic temperatures.
- Subjects
MICROWAVE switches; GERMANIUM telluride; THIN films; ELECTRIC switchgear; SUPERCONDUCTIVITY
- Publication
Journal of Low Temperature Physics, 2019, Vol 194, Issue 3/4, p273
- ISSN
0022-2291
- Publication type
Article
- DOI
10.1007/s10909-018-2096-8