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- Title
High-performance polarization-sensitive photodetectors on two-dimensional β-InSe.
- Authors
Guo, Zhinan; Cao, Rui; Wang, Huide; Zhang, Xi; Meng, Fanxu; Chen, Xue; Gao, Siyan; Sang, David K; Nguyen, Thi Huong; Duong, Anh Tuan; Zhao, Jinlai; Zeng, Yu-Jia; Cho, Sunglae; Zhao, Bing; Tan, Ping-Heng; Zhang, Han; Fan, Dianyuan
- Abstract
Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes (γ -, ϵ - and β -phase) of InSe, only the crystal lattice of InSe in β -phase (β -InSe) belongs to a non-symmetry point group of |$D_{6h}^4$| , which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of β -InSe-based optoelectronic devices. Therefore, we prepare the stable p-type 2D-layered β -InSe via temperature gradient method. The anisotropic Raman, transport and photoresponse properties of β -InSe have been experimentally and theoretically proven, showing that the β -InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage, respectively. The appealing anisotropic properties demonstrated in this work clearly identify β -InSe as a competitive candidate for filter-free polarization-sensitive photodetectors.
- Subjects
PHOTODETECTORS; CRYSTAL lattices; OPTOELECTRONIC devices; INDIUM selenide; POINT set theory; RAMAN spectroscopy; TRANSISTORS
- Publication
National Science Review, 2022, Vol 9, Issue 5, p1
- ISSN
2095-5138
- Publication type
Article
- DOI
10.1093/nsr/nwab098