We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Growth of two-dimensional Janus MoSSe by a single in situ process without initial or follow-up treatments.
- Authors
Jang, Chan Wook; Lee, Won Jun; Kim, Jae Kuk; Park, Sang Minh; Kim, Sung; Choi, Suk-Ho
- Abstract
Two-dimensional (2D) Janus transition metal dichalcogenides (TMDCs) are highly attractive as an emerging class of 2D materials, but only a few methods are available for fabricating them. These methods rely on the initial growth of 2D TMDCs in one process, followed by an additional plasma or high-temperature (T) process. To overcome these drawbacks, we employ the new approach of NaCl-assisted single-process chemical vapor deposition, which consists of three steps that proceed only by altering the temperature in situ. In the first step, MoS2 is deposited onto a SiO2/Si substrate with the Mo and S atoms activated in different temperature zones. In the second step, S vacancies are formed in the upper layer of the grown MoS2 by annealing. In the third step, the vacancies are filled with activated Se atoms. Throughout the steps, NaCl lowers the melting point of the constituent atoms, while the T in each zone is properly controlled. The growth mechanism is clarified by a separate annealing experiment that does not involve a supply of activated atoms. These results highlight a simple and cost-effective approach for growing Janus MoSSe, which is more useful for fundamental studies and device applications.(Left) Schematic diagrams describing a single in-situ chemical-vapor-deposition process for growing two-dimensional Janus MoSSe without initial or follow-up treatments and the growth mechanism consisting of three steps; 1) growth of a MoS2 layer, 2) formation of vacancies on the top MoS2 layer by an annealing effect, and filling of Se atoms in the vacancies. (Right) Optical-microscopy and photoluminescence-mapping images for a typical two-dimensional Janus sample showing that the central MoSSe region is distinguished from the peripheral MoSe2 region.
- Publication
NPG Asia Materials, 2022, Vol 14, Issue 1, p1
- ISSN
1884-4049
- Publication type
Article
- DOI
10.1038/s41427-022-00363-x