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- Title
Observation of resonant exciton and correlated plasmon yielding correlated plexciton in amorphous silicon with various hydrogen content.
- Authors
Prayogi, Soni; Asih, Retno; Priyanto, Budhi; Baqiya, Malik A.; Naradipa, Muhammad A.; Cahyono, Yoyok; Darminto; Rusydi, Andrivo
- Abstract
Hydrogenated amorphous silicon (a-Si: H) has received great attention for rich fundamental physics and potentially inexpensive solar cells. Here, we observe new resonant excitons and correlated plasmons tunable via hydrogen content in a-Si: H films on Indium Tin Oxide (ITO) substrate. Spectroscopic ellipsometry supported with High Resolution-Transmission Electron Microscopy (HR-TEM) is used to probe optical properties and the density of electronic states in the various crystallinity from nano-size crystals to amorphous a-Si: H films. The observed optical and electronic structures are analyzed by the second derivative with analytic critical-point line shapes. The complex dielectric function shows good agreement with microscopic calculations for the energy shift and the broadening inter-band transitions based on the electron–hole interaction. Interestingly, we observe an unusual spectral weight transfer over a broad energy range revealing electronic correlations that cause a drastic change in the charge carrier density and determine the photovoltaic performance. Furthermore, the interplay of resonant excitons and correlated plasmons is discussed in term of a correlated plexciton. Our result shows the important role of hydrogen in determining the coupling of excitons and plasmons in a-Si: H film for photovoltaic devices.
- Subjects
AMORPHOUS silicon; CARRIER density; HYDROGENATED amorphous silicon; INDIUM tin oxide; CHARGE carrier mobility; DIELECTRIC function; COLLISION broadening; SPECTRAL line broadening
- Publication
Scientific Reports, 2022, Vol 12, Issue 1, p1
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/s41598-022-24713-5