We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Optoelectronic Synapses Based on MoS<sub>2</sub> Transistors for Accurate Image Recognition (Adv. Mater. Interfaces 32/2022).
- Authors
Huang, Biying; Li, Na; Wang, Qinqin; Ouyang, Chen; He, Congli; Zhang, Lianchang; Du, Luojun; Yang, Wei; Yang, Rong; Shi, Dongxia; Zhang, Guangyu
- Abstract
Optoelectronic Synapses Based on MoS2 Transistors for Accurate Image Recognition (Adv. Field effect transistors, image recognition, large-scale MoS 2, optoelectronic synapses Keywords: field effect transistors; image recognition; large-scale MoS 2; optoelectronic synapses EN field effect transistors image recognition large-scale MoS 2 optoelectronic synapses 1 1 1 11/16/22 20221115 NES 221115 B Opto-Synaptic Devices b Artificial optoelectronic synapses based on MoS SB 2 sb field-effect transistors (FETs) have been implemented by Biying Huang, Na Li, Guangyu Zhang, and colleagues in article number 2201558.
- Subjects
SYNAPSES; FIELD-effect transistors; IMAGE recognition (Computer vision)
- Publication
Advanced Materials Interfaces, 2022, Vol 9, Issue 32, p1
- ISSN
2196-7350
- Publication type
Article
- DOI
10.1002/admi.202270176