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- Title
Passive-Oxidation Kinetics of SiC Microparticles.
- Authors
Das, D.; Farjas, J.; Roura, P.; Du, H.
- Abstract
We investigated the oxidation kinetics of SiC materials in the form of powders (average dimension 4 μm) in the temperature range 1100°–1500°C in dry air. The oxidation process was monitored through the relative mass gain in a thermobalance. As the specific surface area of the particles was measured, the recorded mass gain could be converted into the corresponding oxide thickness. The oxidation isotherms were fitted to a linear-parabolic equation, and the parabolic rate constant was evaluated. Up to 1400°C, temperature dependence can be described by a single activation energy of 179 kJ/mol, which increases in the 1400°–1500°C temperature range. These results are compared with the oxidation behavior of sintered polycrystalline and monocrystalline SiC materials.
- Subjects
DYNAMICS; POWDER metallurgy; OXIDATION; EVAPORATION (Chemistry); ATMOSPHERIC temperature; IRON metallurgy; SINTERING
- Publication
Journal of the American Ceramic Society, 2004, Vol 87, Issue 7, p1301
- ISSN
0002-7820
- Publication type
Article
- DOI
10.1111/j.1151-2916.2004.tb07726.x