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Antenna Characteristics of a Hemispherical Luneburg Lens in the Scan Mode.
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- Journal of Communications Technology & Electronics, 2019, v. 64, n. 4, p. 357, doi. 10.1134/S106422691904003X
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- Article
Selection of Parameters of the Primary Feed of the Luneberg Lens for the Sum-Difference Operating Mode.
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- Journal of Communications Technology & Electronics, 2018, v. 63, n. 2, p. 123, doi. 10.1134/S1064226918020092
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- Article
Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice.
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- Semiconductors, 2023, v. 57, n. 11, p. 474, doi. 10.1134/S106378262308002X
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- Article
The Influence of the Waveguide Layer Composition on the Emission Parameters of 1550 nm InGaAs/InP Laser Heterostructures.
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- Semiconductors, 2023, v. 57, n. 11, p. 492, doi. 10.1134/S1063782623080134
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- Article
Surface-Emitting Quantum-Cascade Lasers with a Grating Formed by Focused Ion Beam Milling.
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- Semiconductors, 2023, v. 57, n. 10, p. 445, doi. 10.1134/S1063782623090038
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- Article
Heterostructure of a 2.5 THz Range Quantum-Cascade Detector.
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- Semiconductors, 2023, v. 57, n. 10, p. 440, doi. 10.1134/S1063782623050019
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- Article
Study of the Spatial Characteristics of Emission of Surface-Emitting Ring Quantum-Cascade Lasers.
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- Semiconductors, 2023, v. 57, n. 9, p. 377, doi. 10.1134/S1063782623070023
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- Article
1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers.
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- Semiconductors, 2023, v. 57, n. 4, p. 221, doi. 10.1134/S1063782623070072
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- Article
Quantum-Cascade Laser with Radiation Emission through a Textured Layer.
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- Semiconductors, 2022, v. 56, n. 1, p. 1, doi. 10.1134/S106378262201002X
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- Article
Surface Emitting Quantum-Cascade Ring Laser.
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- Semiconductors, 2021, v. 55, n. 7, p. 591, doi. 10.1134/S106378262107006X
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- Article
Quantum-Cascade Ring Resonator Laser with 7–8 μm Wavelength and Surface Radiation Output.
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- Semiconductors, 2020, v. 54, n. 14, p. 1816, doi. 10.1134/S106378262014002X
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- Article
1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy.
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- Semiconductors, 2020, v. 54, n. 10, p. 1276, doi. 10.1134/S1063782620100048
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- Article
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers.
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- Semiconductors, 2019, v. 53, n. 8, p. 1104, doi. 10.1134/S1063782619080074
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- Article
On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures.
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- Semiconductors, 2018, v. 52, n. 9, p. 1156, doi. 10.1134/S1063782618090075
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- Article
Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures.
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- Semiconductors, 2010, v. 44, n. 7, p. 919, doi. 10.1134/S1063782610070158
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- Article
Light-Emitting Si:Er Structures Produced by Molecular-Beam Epitaxy: High-Resolution Photoluminescence Spectroscopy.
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- Semiconductors, 2005, v. 39, n. 12, p. 1399, doi. 10.1134/1.2140312
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- Article
Mathematical Modeling of the γ-Ray Spectra of Fuel Pins with Uranium-Plutonium Fuel for Development of Fissile-Materials Monitoring Procedures.
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- Atomic Energy, 2018, v. 125, n. 2, p. 108, doi. 10.1007/s10512-018-0450-1
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- Article
Unified Model of Pseudogap Features of Conductivity in HTSCs.
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- JETP Letters, 2004, v. 80, n. 4, p. 246, doi. 10.1134/1.1813680
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- Article
Investigation of the Characteristics of the InGaAs/InAlGaAs Superlattice for 1300 nm Range Vertical-Cavity Surface-Emitting Lasers.
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- Technical Physics, 2023, v. 68, n. 12, p. 549, doi. 10.1134/S1063784223080078
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- Article
Studying the Optical and Structural Properties of Three-Dimensional InGaP(As) Islands Formed by Substitution of Elements of the Fifth Group.
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- Technical Physics, 2020, v. 65, n. 12, p. 2047, doi. 10.1134/S1063784220120099
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- Article
Spectral Dynamics of Quantum Cascade Lasers Generating Frequency Combs in the Long-Wavelength Infrared Range.
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- Technical Physics, 2020, v. 65, n. 8, p. 1281, doi. 10.1134/S106378422008006X
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- Article
Isotope-Pure Silicon Layers Grown by MBE.
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- Semiconductors, 2002, v. 36, n. 12, p. 1400, doi. 10.1134/1.1529253
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- Article
Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix.
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- Semiconductors, 2000, v. 34, n. 7, p. 810, doi. 10.1134/1.1188079
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- Article
Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic.
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- Semiconductors, 1999, v. 33, n. 10, p. 1054, doi. 10.1134/1.1187863
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- Article
Features of Single-Mode Emission in 7.5–8.0 μm Range Quantum-Cascade Lasers with a Short Cavity Length.
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- Technical Physics Letters, 2023, v. 49, p. S248, doi. 10.1134/S106378502301008X
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- Article
Impact of Transverse Optical Confinement on Performance of 1.55 μm Vertical-Cavity Surface-Emitting Lasers with a Buried Tunnel Junction.
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- Technical Physics Letters, 2023, v. 49, p. S178, doi. 10.1134/S1063785023900674
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- Article
Analysis of Internal Optical Loss of 1.3 μm Vertical-Cavity Surface-Emitting Laser Based on n<sup>++</sup>-InGaAs/p<sup>++</sup>-InGaAs/p<sup>++</sup>-InAlGaAs Tunnel Junction.
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- Technical Physics Letters, 2023, v. 49, p. S173, doi. 10.1134/S1063785023900662
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- Article
Heterostructures of Quantum-Cascade Lasers with Nonselective Overgrowth by Metalorganic Vapour Phase Epitaxy.
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- Technical Physics Letters, 2023, v. 49, p. S155, doi. 10.1134/S1063785023900625
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- Article
The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology.
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- Technical Physics Letters, 2020, v. 46, n. 12, p. 1257, doi. 10.1134/S1063785020120172
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- Article
A Study of the Spatial-Emission Characteristics of Quantum-Cascade Lasers for the 8-μm Spectral Range.
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- Technical Physics Letters, 2020, v. 46, n. 11, p. 1152, doi. 10.1134/S106378502011019X
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- Article
The Influence of the Parameters of a Short-Period InGaAs/InGaAlAs Superlattice on Photoluminescence Efficiency.
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- Technical Physics Letters, 2020, v. 46, n. 11, p. 1128, doi. 10.1134/S1063785020110267
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- Article
A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n<sup>++</sup>-InGaAs/p<sup>++</sup>-InGaAs/p<sup>++</sup>-InAlGaAs Layers.
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- Technical Physics Letters, 2020, v. 46, n. 9, p. 854, doi. 10.1134/S1063785020090023
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- Article
Heterostructures of Quantum-Cascade Laser for the Spectral Range of 4.6 μm for Obtaining a Continuous-Wave Lasing Mode.
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- Technical Physics Letters, 2020, v. 46, n. 5, p. 442, doi. 10.1134/S1063785020050028
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- Article
Quantum-Cascade Lasers with a Distributed Bragg Reflector Formed by Ion-Beam Etching.
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- Technical Physics Letters, 2020, v. 46, n. 4, p. 312, doi. 10.1134/S1063785020040033
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- Article
Spectral Shift of Quantum-Cascade Laser Emission under the Action of Control Voltage.
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- Technical Physics Letters, 2019, v. 45, n. 11, p. 1136, doi. 10.1134/S106378501911018X
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- Article
High-Power Quantum-Cascade Lasers Emitting in the 8-μm Wavelength Range.
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- Technical Physics Letters, 2019, v. 45, n. 7, p. 735, doi. 10.1134/S1063785019070174
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- Article
Temperature Dependence of the Parameters of 1.55-μm Semiconductor Lasers with Thin Quantum Wells Based on Phosphorus-Free Heterostructures.
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- Technical Physics Letters, 2019, v. 45, n. 6, p. 549, doi. 10.1134/S1063785019060129
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- Article
Room Temperature Lasing of Single-Mode Arched-Cavity Quantum-Cascade Lasers.
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- Technical Physics Letters, 2019, v. 45, n. 4, p. 398, doi. 10.1134/S1063785019040205
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- Article
Fabrication and Study of Optical Properties of LEDs Based on GaN Micropyramids with a Ni/Au/Graphene Semi-Transparent Contact.
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- Technical Physics Letters, 2018, v. 44, n. 12, p. 1111, doi. 10.1134/S1063785018120179
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- Article
Universality of slip avalanches in flowing granular matter.
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- Nature Communications, 2016, v. 7, n. 2, p. 10641, doi. 10.1038/ncomms10641
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- Article
Optical Properties of Three-Dimensional InGaP(As) Islands Formed by Substitution of Fifth-Group Elements.
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- Optics & Spectroscopy, 2021, v. 129, n. 2, p. 256, doi. 10.1134/S0030400X21020089
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- Article
Spectral Characteristics of Half-Ring Quantum-Cascade Lasers.
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- Optics & Spectroscopy, 2020, v. 128, n. 8, p. 1187, doi. 10.1134/S0030400X20080068
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- Article
Study of the Spectra of Arched-Cavity Quantum-Cascade Lasers.
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- Optics & Spectroscopy, 2020, v. 128, n. 6, p. 702, doi. 10.1134/S0030400X20060028
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- Article
Optical Gain in Laser Heterostructures with an Active Area Based on an InGaAs/InGaAlAs Superlattice.
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- Optics & Spectroscopy, 2019, v. 127, n. 6, p. 1053, doi. 10.1134/S0030400X19120099
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- Article
Lasing of a Quantum-Cascade Laser with a Thin Upper Cladding.
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- Optics & Spectroscopy, 2019, v. 127, n. 2, p. 279, doi. 10.1134/S0030400X19080058
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- Article
Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique.
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- Optics & Spectroscopy, 2019, v. 127, n. 1, p. 140, doi. 10.1134/S0030400X1907004X
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- Article
Erratum to: Optical Gain of 1550-nm-Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them.
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- 2019
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- Publication type:
- Correction Notice
Electroluminescence of Single InGaN/GaN Micropyramids.
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- Optics & Spectroscopy, 2019, v. 126, n. 2, p. 118, doi. 10.1134/S0030400X19020036
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- Publication type:
- Article
Erratum to: Optical Gain of 1550-nm Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them.
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- 2018
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- Publication type:
- Correction Notice
Optical Gain of 1550-nm Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them.
- Published in:
- Optics & Spectroscopy, 2018, v. 125, n. 2, p. 238, doi. 10.1134/S0030400X18080143
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- Publication type:
- Article