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- Title
Structural, chemical and electrical properties of ALD-grown Hf<sub> x</sub>Al<sub>1- x</sub>O<sub> y</sub> thin films for MIM capacitors.
- Authors
Chernikova, A. G.; Markeev, A. M.; Lebedinskii, Yu. Yu.; Kozodaev, M. G.; Zablotskiy, A. V.
- Abstract
In this paper atomic-layer deposition (ALD) Hf xAl1- xO y thin films with a wide range of metal components concentrations ( x = 0.2−0.8) for metal-insulator-metal (MIM) capacitors were investigated with emphasis on the chemical properties and phase composition. It was shown by X-ray diffraction (XRD) that all films are amorphous. X-ray photoelectron spectroscopy (XPS) revealed the same energy position with respect to the valence-band maximum of Al2p and Hf4f lines and a continuous shift of O1s and O-KLL lines toward the higher binding energy (0.45 and 2.2 eV, respectively) with increase of Al content. Both the shape and position of O1s and O-KLL lines indicated the inability to deconvolute it on sublines related to the binary oxides. The calculated modified Auger parameter indicated the change of the ionicity of the bonding in Hf xAl1- xO y films with change of the composition. Thus, it was proposed that Hf xAl1- xO y films in all the studied composition range represent amorphous solid solutions. The continuous change of energy bandgap measured by reflected electron energy loss spectroscopy (REELS) from ∼6.5 eV for Al2O3 to ∼5.4 eV for HfO2 and XRD data do not contradict this assumption. Correlation between structural properties of Hf xAl1- xO y films and electrical properties of MIM capacitors based on them was also shown, that is, continuous change in capacitance density (from 3.1 to 7.4fF/µm2), leakage current density and quadratic voltage coefficient of capacitance with composition change was observed.
- Subjects
MIM capacitors; THIN films; METAL-insulator-metal devices; SOLID state electronics; X-ray diffraction
- Publication
Physica Status Solidi (B), 2015, Vol 252, Issue 4, p701
- ISSN
0370-1972
- Publication type
Article
- DOI
10.1002/pssb.201451449