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- Title
Artificial Synapse Based on Back‐Gated MoS<sub>2</sub> Field‐Effect Transistor with High‐k Ta<sub>2</sub>O<sub>5</sub> Dielectrics.
- Authors
Mohta, Neha; Mech, Roop K.; Sanjay, Sooraj; Muralidharan, R.; Nath, Digbijoy N.
- Abstract
Herein, a multilayer MoS2‐based low‐power synaptic transistor using Ta2O5 as a back‐gate dielectric for mimicking the biological neuronal synapse is reported. The use of high‐k dielectric allows for a lower‐voltage swing compared with using conventional SiO2, thus offering an attractive route to low‐power synaptic device architectures. Exfoliated MoS2 is utilized as the channel material, and the hysteresis in the transfer characteristics of the transistor is exploited to demonstrate excitatory and inhibitory postsynaptic currents, long‐term potentiation, and long‐term depression (LTP/LTD), indirect spike timing‐dependent plasticity (STDP) based on single and sequential gate (Vg) pulses, respectively. The synapse had achieved a 35% weight change in channel conductance within 15 electrical pulses for negative synaptic gate pulse and 28% change for positive synaptic gate pulse. A complete tunability of weight in the synapse by spike amplitude‐dependent plasticity (SADP) at a low voltage of 4 V is also demonstrated.
- Subjects
FIELD-effect transistors; DIELECTRICS; SYNAPSES; LONG-term potentiation; LOW voltage systems; TRANSISTORS
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2020, Vol 217, Issue 19, p1
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.202000254