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- Title
Low cost high voltage GaN polarization superjunction field effect transistors.
- Authors
Kawai, H.; Yagi, S.; Hirata, S.; Nakamura, F.; Saito, T.; Kamiyama, Y.; Yamamoto, M.; Amano, H.; Unni, V.; Narayanan, E. M. S.
- Abstract
A comprehensive overview of the novel high voltage GaN field effect transistors (FETs) based on the Polarization Superjunction (PSJ) concept, and a cost-effective approach towards manufacturing these high performance devices are presented. Current challenges impeding wider adoption of GaN power switching transistors in applications, and the latest results of the scaled-up PSJ-FETs from POWDEC KK, are also discussed. The article also presents hard-switching characteristics of 400-800 V boost converter, constructed using a PSJ-FET grown on sapphire substrate, and the future direction of GaN power semiconductor technology based on monolithic integration for advanced power electronics.
- Subjects
FIELD-effect transistors; GALLIUM nitride; HIGH voltages; POLARIZATION (Electricity); CRYSTAL growth
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2017, Vol 214, Issue 8, pn/a
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201600834