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- Title
A Coupled Approach to Compute the Dislocation Density Development during Czochralski Growth and Its Application to the Growth of High-Purity Germanium (HPGe).
- Authors
Miller, Wolfram; Sabanskis, Andrejs; Gybin, Alexander; Gradwohl, Kevin-P.; Wintzer, Arved; Dadzis, Kaspars; Virbulis, Jānis; Sumathi, Radhakrishnan
- Abstract
The evolution of the dislocation density during Czochralski growth is computed by the combination of global thermal calculations and local computation of the stress and dislocation density in the crystal. The global simulation was performed using the open-source software Elmer (version 8.4) and the local simulation with the open-source software MACPLAS (version of 23.1.2023). Interpolation both in space and time was used to transfer the boundary conditions from the global simulations to the local model, which uses a different mesh discretization and a considerably smaller time step. We applied this approach to the Czochralski growth of a high-purity Ge crystal. The heater power change predicted by the global model as well as the final dislocation density distribution in the crystal simulated by the local model are correlated to the experimental results.
- Subjects
DISLOCATION density; DISLOCATIONS in crystals; GERMANIUM; INTERPOLATION spaces; SIMULATION software; DENSITY
- Publication
Crystals (2073-4352), 2023, Vol 13, Issue 10, p1440
- ISSN
2073-4352
- Publication type
Article
- DOI
10.3390/cryst13101440