We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Synthesis of Doped Diamond by High-Pressure and High-Temperature: a Review.
- Authors
HAO Jinglin; DENG Lifen; WANG Kaiyue; SONG Hui; JIANG Nan; KAZUHITO Nishimura
- Abstract
Diamond possesses an ultra-high thermal conductivity and a wide band-gap. Its electrical resistance could be adjusted for the semiconductor application by increasing the electron and vacancy content introduced by doping different elements. Therefore, diamond is thought to be the final wide band-gap semiconductor materials. This paper firstly introduces the synthesis of diamond by high-pressure and high-temperature (HPHT) method, and then systematically reviews the current status and developments of diamond doping by HPHT. The effects of single-element doping, such as N, B, P, and S, as well as multi-elements co-doping in the diamond crystal growth and its electrical properties are analyzed. In additional, this paper summaries the study diamond doping using first-principle calculation. HPHT annealing could effectively change the combinations of doped elements and the associated vacancies and their distribution. This paper reviews the adjustment of nitrogen-related color centers in diamond by HPHT annealing, elucidating the formation mechanisms of various nitrogen-related color centers. Finally, This paper prospects the potential optical and electrical properties of doped diamonds, highlighting the importance of theoretical calculations and experimental methods for multi-element co-doping investigation to enhance the performance of doped diamonds.
- Subjects
DIAMOND crystals; DIAMONDS; SEMICONDUCTOR materials; DOPING agents (Chemistry); CRYSTAL growth
- Publication
Journal of Synthetic Crystals, 2024, Vol 53, Issue 2, p194
- ISSN
1000-985X
- Publication type
Article