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- Title
High‐frequency characteristics of L<sub>g</sub> = 60 nm InGaAs MOS high‐electron‐mobility‐transistor (MOS‐HEMT) with Al<sub>2</sub>O<sub>3</sub> gate insulator.
- Authors
Kim, T.‐W.; Kim, J.S.; Kim, D.‐K.; Shin, S.H.; Park, W.‐S.; Banerjee, S.; Kim, D.‐H.
- Abstract
High‐frequency characteristics of Lg = 60 nm In0.7Ga0.3As MOS‐high‐electron‐mobility transistor (HEMTs) with a 3 nm aluminium oxide grown by atomic‐layer‐deposition is reported. Fabricated In0.7Ga0.3As MOS‐HEMTs with Lg = 60 nm exhibit subthreshold‐swing (SS) = 89 mV/dec., drain‐induced‐barrier‐lowering = 98 mV/V, gm_max = 1.1 mS/μm, fT = 187 GHz and fmax = 202 GHz at VDS = 0.5 V. The high‐frequency characteristics showed is the best balanced demonstration of fT and fmax in the buried‐channel indium gallium arsenide MOS‐HEMTs, revealing a strong potential of the buried‐channel design scheme for future high frequency, low‐noise and high‐performance logic applications.
- Publication
Electronics Letters (Wiley-Blackwell), 2016, Vol 52, Issue 11, p870
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2015.3573