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- Title
Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection.
- Authors
Qi Zhou; Li Liu; Xingye Zhou; Anbang Zhang; Yuanyuan Shi; Zeheng Wang; Yuan Gang Wang; Yulong Fang; Yuanjie Lv; Zhihong Feng; Bo Zhang
- Abstract
A zero-bias microwave detector using an AlGaN/GaN-on-Si lateral diode featuring a recessed metal/Al2O3/III-nitride (MIS) gated hybrid anode (MG-HAD) is experimentally demonstrated. The forward turnon voltage of the MG-HAD is determined by the threshold-voltage of the 2DEG channel beneath the recessed MIS-gate, and thus the nonlinearity of the device at zero bias can be flexibly modulated by gate recessing. The optimal trench depth of the MIS-gate for zero-bias detection was designed and experimentally determined to be ~23 nm, which enables a high-curvature coefficient of 78 V-1 at zero bias. The first-order voltage sensitivity, βV, is as high as 7.8 mV/µW. To the best of the authors' knowledge, these values are the highest reported for GaN-based zero-bias detectors to date.
- Subjects
MICROWAVE detectors; ALUMINUM gallium nitride films; DIODES; ANODES; THRESHOLD voltage
- Publication
Electronics Letters (Wiley-Blackwell), 2015, Vol 51, Issue 23, p1889
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2015.2885