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- Title
Current-voltage characteristic of a narrow-band semiconductor taking into account ionization of impurities.
- Authors
Zav'yalov, D. V.; Kryuchkov, S. V.; Marchuk, E. V.
- Abstract
The current-voltage characteristic of a material with a narrow conduction band in a strong electric field is studied taking into account ionization of deeply lying impurities in the model, in which collisions of charge carriers are described in the Fokker-Planck approximation. The results are compared with analogous results obtained in the v approximation. It is shown that the results obtained earlier in the v approximation coincide with our results to within ∼ 5%. It is noted that the Fokker-Planck model additionally provides the temperature dependence of the current-voltage characteristic.
- Subjects
CONDUCTION bands; ELECTRIC fields; METAL inclusions; IONIZATION (Atomic physics); ELECTRIC potential
- Publication
Technical Physics, 2008, Vol 53, Issue 9, p1243
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/S1063784208090193