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- Title
Observation of the Pinch‐Off Effect during Electrostatically Gating the Metal‐Insulator Transition.
- Authors
Yajima, Takeaki; Toriumi, Akira
- Abstract
Electrostatically controlling material phases has been a long‐standing challenge. While it is partially achieved by electrostatic gating with ionic liquid, it often involves unintended chemical reactions. In this sense, it has recently attracted tremendous attention that a solid‐state electrostatic gating is successfully applied to insulator‐metal transition by using ultrahigh‐permittivity gate dielectrics. However, the detailed characteristics of this new class of device are totally unknown. Here, systematic studies are performed on the three‐terminal device using VO2 insulator‐metal transition and TiO2 gate dielectrics, and for the first time the pinch‐off effect in phase transition devices is observed, a clear sign of electrostatic gating. Furthermore, the increase in the drain voltage has a "catalytic effect" of drastically sharpening the gate‐induced transition, demonstrating a 0.1 V gate control. The characteristics are simulated by a quasi‐equilibrium model, providing the firm ground for electrical control of material phases with high speed and high resolution.
- Subjects
METAL-insulator transitions; CHEMICAL reactions; PHASE transitions; TRANSITION metals; CATALYSIS; QUASI-equilibrium; INDIUM gallium zinc oxide
- Publication
Advanced Electronic Materials, 2022, Vol 8, Issue 2, p1
- ISSN
2199-160X
- Publication type
Article
- DOI
10.1002/aelm.202100842