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- Title
Shot noise measurements in a wide-channel transistor near pinch-off.
- Authors
Khrapai, V.; Shovkun, D.
- Abstract
We study a shot noise of a wide channel gated high-frequency transistor at a temperature of 4.2 K near pinch-off. In this regime, a transition from the metallic to the insulating state is expected to occur, accompanied by the increase in the partition noise. The dependence of the noise spectral density on current is found to be slightly nonlinear. At low currents, the differential Fano factor is enhanced compared to the universal value 1/3 for metallic diffusive conductors. We explain this result by the effect of thermal fluctuations in a nonlinear regime near pinch-off, without calling for the enhanced partition noise.
- Subjects
NOISE measurement; TRANSISTORS; TEMPERATURE effect; PARTITION coefficient (Chemistry); SPECTRAL energy distribution; DIFFUSION; INSULATION contractors
- Publication
JETP Letters, 2010, Vol 92, Issue 7, p460
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/S0021364010190069