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- Title
Structure, optical and electrical properties of Nb-doped ZnO transparent conductive thin films prepared by co-sputtering method.
- Authors
Liu, Yantao; Wang, Wenxia; Ma, Jianping; Wang, Ying; Ye, Wei; Zhang, Chao; Chen, Jingjing; Li, Xinyu; Du, Yan
- Abstract
Nb-doped ZnO thin films were fabricated on glass substrates by using co-sputtering with direct-current and radio frequency magnetron sputtering. The structures, optical and electrical performances of Nb-doped ZnO thin films were investigated. The results showed that all thin films have (0 0 2) c -axis preferential orientation. The minimum resistivity of 2. 1 2 × 1 0 − 3 Ω cm and the maximum carrier concentration of 2. 3 9 × 1 0 1 9 cm − 3 were obtained at the direct-current sputtering power of 10 W, respectively. Nb-doped ZnO thin films have also shown high average transmittance of 89.6%, and lower surface roughness of 2.74 nm. Meanwhile, a distinct absorption edge in the ultraviolet range of 300–400 nm was observed in absorbance, the optical band gap of Nb-doped ZnO thin films illustrates an increased tendency with increasing Nb concentration.
- Subjects
ZINC oxide thin films; MAGNETRON sputtering; ELECTRIC properties of thin films; OPTICAL properties; DC sputtering
- Publication
Journal of Advanced Dielectrics, 2019, Vol 9, Issue 6, pN.PAG
- ISSN
2010-135X
- Publication type
Article
- DOI
10.1142/S2010135X19500486