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- Title
Characterization of tin(II) sulfide defects/vacancies and correlation with their photocurrent.
- Authors
Liu, Mingyang; Wang, Luqing; Zhou, Linan; Lei, Sidong; Joyner, Jarin; Yang, Yingchao; Vajtai, Robert; Ajayan, Pulickel; Yakobson, Boris; Spanos, Pol
- Abstract
The presence of defects/vacancies in nanomaterials influences the electronic structure of materials, and thus, it is necessary to study the correlation between the optoelectronic properties of a nanomaterial and its defects/vacancies. Herein, we report a facile solvothermal route to synthesize three-dimensional (3D) SnS nanostructures formed by {131} faceted nanosheet assembly. The 3D SnS nanostructures were calcined at temperatures of 350, 400, and 450 °C and used as counter electrodes, before their photocurrent properties were investigated. First principle computation revealed the photocurrent properties depend on the defect/vacancy concentration within the samples. It is very interesting that characterization with positron annihilation spectrometry confirmed that the density of defects/vacancies increased with the calcination temperature, and a maximum photocurrent was realized after treatment at 400 °C. Further, the defect/vacancy density decreased when the calcination temperature reached 450 °C as the higher calcination temperature enlarged the mesopores and densified the pore walls, which led to a lower photocurrent value at 450 °C than at 400 °C.
- Publication
Nano Research, 2017, Vol 10, Issue 1, p218
- ISSN
1998-0124
- Publication type
Article
- DOI
10.1007/s12274-016-1279-3