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- Title
Double-Forming Mechanism of TaO x -Based Resistive Memory Device and Its Synaptic Applications.
- Authors
Ju, Dongyeol; Kim, Sunghun; Lee, Subaek; Kim, Sungjun
- Abstract
The bipolar resistive switching properties of Pt/TaOx/InOx/ITO-resistive random-access memory devices under DC and pulse measurement conditions are explored in this work. Transmission electron microscopy and X-ray photoelectron spectroscopy were used to confirm the structure and chemical compositions of the devices. A unique two-step forming process referred to as the double-forming phenomenon and self-compliance characteristics are demonstrated under a DC sweep. A model based on oxygen vacancy migration is proposed to explain its conduction mechanism. Varying reset voltages and compliance currents were applied to evaluate multilevel cell characteristics. Furthermore, pulses were applied to the devices to demonstrate the neuromorphic system's application via testing potentiation, depression, spike-timing-dependent plasticity, and spike-rate-dependent plasticity.
- Subjects
X-ray photoelectron spectroscopy; TRANSMISSION electron microscopy; X-ray microscopy; NONVOLATILE random-access memory; CHEMICAL structure; RANDOM access memory
- Publication
Materials (1996-1944), 2023, Vol 16, Issue 18, p6184
- ISSN
1996-1944
- Publication type
Article
- DOI
10.3390/ma16186184